منابع مشابه
Transient-Enhanced Diffusion in Shallow-Junction Formation
Current methods for forming junctions in the source and drain regions of complementary metaloxide semiconductor (CMOS) transistor circuits use low-energy ion implantation and rapid thermal annealing (RTA). Spike annealing, with fast ramping and short dwell time at maximum temperature, has been shown to be advantageous for shallow-junction formation. Diffusion and electrical activation of implan...
متن کاملRf and Microwave Annealing for Ultra-shallow Junction Formation
Next generation, 100 nm, devices require junctions shallower than 33 nm with sheet resistances less than 600 ohms/square. A new technique for annealing implanted dopants utilizes electromagnetic fields to induce current flow through the wafer. Ohmic collisions between high-energy electrons and the lattice rapidly heats the silicon; providing the energy necessary for dopant activation. Heating r...
متن کاملJunction Depth Dependence of the Gate Induced Drain Leakage in Shallow Junction Source/Drain-Extension Nano-CMOS
This study describes the dependence of the surface electric field to the junction depth of source/drain-extension, and the suppression of gate induced drain leakage (GIDL) in fully depleted shallow junction gate-overlapped source/drain-extension (SDE). The GIDL can be reduced by reducing shallow junction depth of drain-extension. Total space charges are a function of junction depth in fully dep...
متن کاملMolecular Dynamics (MD) Calculation on Ion Implantation Process with Dynamic Annealing for Ultra-shallow Junction Formation
In this paper, we report a molecular dynamics (MD) simulation of the ion implantation for nano-scale devices with ultra-shallow junctions. In order to model the profile of ion distribution in nanometer scale, the molecular dynamics with a damage model has been employed while the kinetic Monte Carlo (KMC) diffusion model was used for the dynamic annealing between cascades. The distribution of do...
متن کاملLow-Frequency Noise Characterization of Ultra-shallow Gate N-channel Junction Field Effect Transistors
A recently developed technique for ultra shallow pn junction formation has been applied for the fabrication of ringgate n-channel junction field effect devices (JFET) devices. Several different geometries, gate formation parameters and channel doping profiles have been realized and characterized with respect to I-V and C-V characteristics both on wafer and after packaging. Low-frequency noise m...
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ژورنال
عنوان ژورنال: IEEJ Transactions on Fundamentals and Materials
سال: 1991
ISSN: 0385-4205,1347-5533
DOI: 10.1541/ieejfms1990.111.7_587